PK60N512VMD100 Freescale Semiconductor, PK60N512VMD100 Datasheet - Page 34

• Manufacturer Part Number: PK60N512VMD100
• Description: IC ARM CORTEX MCU 512K 144-MAP
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr

Specifications of PK60N512VMD100

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, IrDA, SDHC, SPI, UART/USART, USB, USB OTG
• Peripherals: DMA, I²S, LVD, POR, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 33x16b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LBGA
• Processor Series: Kinetis
• Core: ARM Cortex M4
• Data Ram Size: 128 KB
• Interface Type: UART, SPI, I2C, I2S, CAN
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 100
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Peripheral operating requirements and behaviors
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
34
n
n
n
t
n
n
t
t
nvmretee100
t
t
nvmwree128
nvmwree512
nvmretd100
nvmretee10
nvmwree32k
n
Symbol
nvmwree16
nvmretd1k
nvmretee1
nvmwree4k
nvmcycd
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
Table 21. NVM reliability specifications (continued)
EEPROM – 2 × EEESPLIT × EEESIZE
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
javg
= 55°C (temperature profile over the lifetime of the application).
EEESPLIT × EEESIZE
FlexRAM as EEPROM
Preliminary
1.27 M
315 K
10 M
80 M
10 K
35 K
Min.
10
15
10
15
5
Typ.
j
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
≤ 125°C.
× Write_efficiency × n
1
Max.
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Freescale Semiconductor, Inc.
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
Unit
nvmcycd
Notes
2
2
3
2
2
2
4