BUK664R8-75C,118 NXP Semiconductors, BUK664R8-75C,118 Datasheet - Page 6

• Manufacturer Part Number: BUK664R8-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK664R8-75C,118

• Input Capacitance (ciss) @ Vds: 177nC @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
6. Characteristics
Table 6.
BUK664R8-75C
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
I
see
I
see
I
see
V
T
V
R
from upper edge of drain mounting base
to centre of die; T
from source lead to source bond pad;
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
G(ext)
= 25 °C; see
= 25 °C
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 2.5 mA; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure
Figure 10
Figure 10
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure
Figure
= 75 V; V
= 75 V; V
= 0 V; V
= 0 V; V
= 55 V; R
= 10 V; I
= 4.5 V; I
= 5 V; I
= 10 V; I
= 0 V; V
= 10 Ω
Rev. 2 — 17 November 2010
9; see
12; see
13; see
13; see
13; see
D
DS
DS
DS
DS
DS
GS
GS
DS
D
D
D
= 25 A; T
GS
GS
L
DS
GS
GS
= 25 A; T
= 25 A; T
= 60 V; V
= 60 V; V
= 60 V; V
= V
= V
= 25 A; T
Figure 15
= 2.2 Ω; V
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
j
Figure 10
= 25 °C
GS
GS
Figure 11
Figure 14
Figure 14
Figure 14
GS
; T
; T
j
; T
= 25 °C;
j
j
j
j
GS
GS
GS
j
j
j
j
= 25 °C;
= -55 °C;
= 25 °C;
= 175 °C;
j
j
j
= 25 °C;
GS
= 175 °C
= 25 °C
= 25 °C
j
= 25 °C
= -55 °C
= 25 °C
= 175 °C;
= 10 V;
= 5 V;
= 10 V;
= 10 V;
BUK664R8-75C
Min
75
68
1.8
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N-channel TrenchMOS FET
Typ
-
-
2.3
-
-
-
0.02
2
2
4.3
5.3
5
-
177
100
21.8
46.7
8500
650
421
32.6
65
365
141
3.5
7.5
© NXP B.V. 2010. All rights reserved.
-
780
-
Max
-
-
2.8
3.3
-
500
1
100
100
5
7.2
6.3
13
-
-
-
11400 pF
580
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
nH
nH
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