BUK664R8-75C,118 NXP Semiconductors, BUK664R8-75C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK664R8-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK664R8-75C,118

• Input Capacitance (ciss) @ Vds: 177nC @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK664R8-75C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
I
R
(mΩ)
D
10
10
10
10
10
10
DSon
20
15
10
-1
-2
-3
-4
-5
-6
5
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
3.8
50
1
4.0
100
min
2
typ
150
V
max
GS
(V) =
3
200
All information provided in this document is subject to legal disclaimers.
003aae757
4.5
003aad806
V
GS
I
D
(A)
(V)
10.0
5.0
6.0
Rev. 2 — 17 November 2010
250
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
3
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK664R8-75C
max @1mA
min @2.5mA
typ @1mA
N-channel TrenchMOS FET
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad804
T
j
j
(°C)
(°C)
180
180
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