BUK664R8-75C,118 NXP Semiconductors, BUK664R8-75C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK664R8-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK664R8-75C,118

• Input Capacitance (ciss) @ Vds: 177nC @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK664R8-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
fs
I
250
200
150
100
D
200
160
120
50
80
40
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
40
T
j
= 175 °C
2
…continued
80
T
4
j
= 25 °C
120
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
003aae430
003aae759
I
= 25 A; V
= 20 A; dI
D
(V)
(A)
Figure 16
= 25 V
Rev. 2 — 17 November 2010
160
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(A)
I
DSon
D
200
150
100
20
15
10
50
5
0
0
of gate-source voltage; typical values
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
Output characteristics: drain current as a
GS
0
0
= 0 V;
V
GS
(V) = 10.0
0.5
5
BUK664R8-75C
Min
-
-
-
N-channel TrenchMOS FET
6.0
10
1
5.0
Typ
0.85
62
153
1.5
15
© NXP B.V. 2010. All rights reserved.
V
003aae756
003aae758
V
GS
DS
4.5
Max
1.2
-
-
(V)
4.0
3.8
(V)
3.6
3.4
20
2
Unit
V
ns
nC
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