XC3S1400AN-4FGG484C Xilinx Inc, XC3S1400AN-4FGG484C Datasheet - Page 48

• Manufacturer Part Number: XC3S1400AN-4FGG484C
• Description: IC FPGA SPARTAN-3AN 484FPGA
• Manufacturer: Xilinx Inc
• Series: Spartan™-3ANr

Specifications of XC3S1400AN-4FGG484C

• Number Of Logic Elements/cells: 25344
• Number Of Labs/clbs: 2816
• Total Ram Bits: 589824
• Number Of I /o: 372
• Number Of Gates: 1400000
• Voltage - Supply: 1.14 V ~ 1.26 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 484-BBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 4: Write and Program Commands
EEPROM-Like, Byte-Level Write Operations
Sequential vs. Random Page Programming, Cumulative
Operations
48
The Spartan-3AN FPGA In-System Flash (ISF) memory includes small page size, SRAM
page buffers, combined with flexible memory read and write commands. Consequently,
the ISF memory can perform small, byte-level write operations, much like EEPROM
memories.
To update one or more bytes without affecting other Flash data, perform these steps.
•
•
•
In most applications, the ISF memory stores nonvolatile data such as FPGA bitstreams and
MicroBlaze™ processor code. In these applications, entire memory sectors are first erased,
then new programming data is written to each page sequentially. In these applications,
where data is programmed sequentially, each page supports up to 100,000 program/erase
cycles.
In other applications, the FPGA application may store or update nonvolatile data in
randomly-addressed page locations. One such example is described in
Byte-Level Write
program/erase cycles, each page within a randomly-addressed sector must be refreshed
every 10,000 cumulative page erase/program operations with that sector. Refreshing the
page contents avoids any potential charge buildup due to the random page programming
operations.
The ISF memory has a special command,
Copy the contents of an entire ISF memory page to an SRAM page buffer using the
Page to Buffer Transfer
Update one or more locations in the SRAM page buffer.
♦
♦
If randomly updating data, each page within a sector must be updated/rewritten at
least once every 10,000 cumulative page erase or page programming operations in
that sector. Instead of tracking the number of operations, optionally issue a
Rewrite
If updating one byte or contiguous bytes, use a
command, which automatically erases and programs the addressed page at the
completion of the command.
If updating multiple, non-contiguous bytes, update selected locations in the page
buffer using multiple
complete, issue a
command after updating each page.
Operations”. While each page still supports a maximum of 100,000
Buffer to Page Program with Built-in Erase
www.xilinx.com
command.
Buffer Write
Auto Page
commands. When the buffer updates are
Spartan-3AN FPGA In-System Flash User Guide
Rewrite, specifically for this purpose.
Page Program Through Buffer
UG333 (v2.1) January 15, 2009
command.
“EEPROM-Like,
Auto Page
R