MMA20312BT1 Freescale Semiconductor, MMA20312BT1 Datasheet - Page 2

• Manufacturer Part Number: MMA20312BT1
• Description: IC AMP HBT INGAP/GAAS 12-QFN
• Manufacturer: Freescale Semiconductor

Specifications of MMA20312BT1

• Current - Supply: 70mA
• Frequency: 1.8GHz ~ 2.2GHz
• Gain: 27.2dB
• Noise Figure: 3.3dB
• P1db: 28.2dBm
• Package / Case: 12-VQFN Exposed Pad
• Rf Type: LTE, PCS, TD-SCDMA, UMTS
• Test Frequency: 2.14GHz
• Voltage - Supply: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
MMA20312BT1
Table 4. Electrical Characteristics
Table 5. ESD Protection Characteristics
Table 6. Moisture Sensitivity Level
Application Circuit)
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression, CW
Third Order Output Intercept Point, Two--Tone CW
Noise Figure
Supply Current
Supply Voltage
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
2. For reliable operation, the junction temperature should not exceed 150°C.
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
V
RF
BIAS
V
B1
in
(1,2)
(2)
Figure 1. Functional Block Diagram
(1)
Test Methodology
CIRCUIT
CIRCUIT
Characteristic
BIAS
BIAS
V
BA2
GND
Test Methodology
(V
V
GND
CC1
CC1
= V
GND
CC2
V
CC1
= V
CTRL
= 5 Vdc, 2140 MHz, T
Symbol
P1dB
OIP3
ORL
Rating
V
IRL
I
NF
G
CQ
CC
p
3
RF
RF
V
CC2
out
out
A
= 25°C, 50 ohm system, in Freescale W--CDMA
23.6
62.5
Min
—
—
—
—
—
—
Package Peak Temperature
V
0 (Minimum), rated to 150 V
RF
BIAS
V
B1
in
Figure 2. Pin Connections
--10.7
--15.5
27.2
28.2
44.5
Typ
3.3
70
260
5
1
2
3
III (Minimum)
A (Minimum)
Class
V
GND GND GND
BA2
12
4
Freescale Semiconductor
V
CC1
11
5
Max
77
—
—
—
—
—
—
—
V
10
CC1
6
RF Device Data
9
8
7
dBm
dBm
Unit
RF
RF
V
mA
Unit
dB
dB
dB
dB
V
°C
CC2
out
out