MMA20312BT1 Freescale Semiconductor, MMA20312BT1 Datasheet - Page 6

• Manufacturer Part Number: MMA20312BT1
• Description: IC AMP HBT INGAP/GAAS 12-QFN
• Manufacturer: Freescale Semiconductor

Specifications of MMA20312BT1

• Current - Supply: 70mA
• Frequency: 1.8GHz ~ 2.2GHz
• Gain: 27.2dB
• Noise Figure: 3.3dB
• P1db: 28.2dBm
• Package / Case: 12-VQFN Exposed Pad
• Rf Type: LTE, PCS, TD-SCDMA, UMTS
• Test Frequency: 2.14GHz
• Voltage - Supply: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
MMA20312BT1
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
22
30
29
28
27
26
25
24
23
21
20
31
30
29
28
27
26
25
24
Efficiency versus Output Power versus Temperature
TYPICAL CHARACTERISTICS — TD- -SCDMA
1800
7
7
Figure 8. ACPR versus Collector Current versus
ACPR
V
f = 2017.5 MHz
Gain
I
CC
CC1
Figure 9. Power Gain versus Power Added
Figure 10. P1dB versus Frequency versus
= V
9
9
Output Power versus Temperature
CC2
PAE
1850
= V
11
11
--40°C
CTRL
--40°C
25°C
85°C
P
P
out
out
Temperature, CW
f, FREQUENCY (MHz)
, OUTPUT POWER (dBm)
= 5 Vdc
, OUTPUT POWER (dBm)
13
13
1900
25°C
25°C
15
15
85°C
85°C
V
f = 2017.5 MHz
V
CC1
CC1
1950
--40°C
17
17
= V
= V
--40°C
25°C
85°C
CC2
CC2
25°C
--40°C
= V
19
19
= V
2000
CTRL
85°C
CTRL
= 5 Vdc
= 5 Vdc
21
21
2050
23
23
200
180
160
140
120
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
0
Freescale Semiconductor
RF Device Data