BUK6E3R2-55C NXP Semiconductors, BUK6E3R2-55C Datasheet - Page 8

• Manufacturer Part Number: BUK6E3R2-55C
• Description: MOSFET,N CH,55V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E3R2-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E3R2-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
R
(mΩ)
I
D
10
10
10
10
10
10
DSon
10
-1
-2
-3
-4
-5
-6
8
6
4
2
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
20
V
1
GS
(V) = 3.8
min
40
2
typ
60
max
3
80
All information provided in this document is subject to legal disclaimers.
4.0
003aae289
003aad806
V
GS
I
D
(V)
(A)
5.0
4.5
10
Rev. 01 — 6 September 2010
100
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK6E3R2-55C
max @1mA
min @2.5mA
typ @1mA
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad803
T
j
j
(°C)
(°C)
180
180
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