BUK6E3R2-55C NXP Semiconductors, BUK6E3R2-55C Datasheet - Page 9

• Manufacturer Part Number: BUK6E3R2-55C
• Description: MOSFET,N CH,55V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E3R2-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E3R2-55C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
All information provided in this document is subject to legal disclaimers.
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C
C
C
oss
iss
rss
(V)
Rev. 01 — 6 September 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
GS
I
S
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
T
0.3
j
= 175 °C
100
V
BUK6E3R2-55C
DS
= 14 V
0.6
200
V
DS
T
j
0.9
= 44 V
= 25 °C
Q
© NXP B.V. 2010. All rights reserved.
G
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V
(nC)
SD
(V)
300
1.2
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