PSMN9R0-30LL NXP Semiconductors, PSMN9R0-30LL Datasheet - Page 4

• Manufacturer Part Number: PSMN9R0-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN9R0-30LL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
(A)
10
10
I
D
10
60
40
20
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
150
DSon
All information provided in this document is subject to legal disclaimers.
T
003aae127
mb
= V
1
( °C)
DS
/ I
200
D
Rev. 04 — 7 July 2010
Fig 2.
N-channel QFN3333 30 V 9 mΩ logic level MOSFET
DC
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
50
PSMN9R0-30LL
100
V
DS
100 ms
1 ms
10 ms
t
100 μ s
(V)
p
=10 μ s
150
© NXP B.V. 2010. All rights reserved.
T
003aae403
003aab937
mb
(°C)
10
200
2
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