2PB709BRL

Manufacturer Part Number2PB709BRL
DescriptionTRANSISTOR,PNP,50V,0.2A,SOT23
ManufacturerNXP Semiconductors
2PB709BRL datasheet
 

Specifications of 2PB709BRL

Transistor PolarityPNPCollector Emitter Voltage V(br)ceo-50V
Power Dissipation Pd250mWDc Collector Current-200mA
Operating Temperature Range-55°C To +150°CTransistor Case StyleSOT-23
No.RoHS CompliantDc Current Gain Hfe210
Rohs CompliantYes  
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NXP Semiconductors
2. Pinning information
Table 3.
Pin
1
2
3
3. Ordering information
Table 4.
Type number
2PB709BRL
2PB709BSL
4. Marking
Table 5.
Type number
2PB709BRL
2PB709BSL
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
2PB709BRL_2PB709BSL
Product data sheet
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
Pinning
Description
base
emitter
collector
Ordering information
Package
Name
Description
-
plastic surface-mounted package; 3 leads
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
Simplified outline
Graphic symbol
3
1
2
[1]
Marking code
MN*
MP*
Conditions
Min
open emitter
-
open base
-
open collector
-
-
single pulse;
-
≤ 1 ms
t
p
single pulse;
-
≤ 1 ms
t
p
© NXP B.V. 2010. All rights reserved.
3
1
2
sym013
Version
SOT23
Max
Unit
−60
V
−50
V
−6
V
−200
mA
−250
mA
−200
mA
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