2PB709BRL NXP Semiconductors, 2PB709BRL Datasheet - Page 6

no-image

2PB709BRL

Manufacturer Part Number
2PB709BRL
Description
TRANSISTOR,PNP,50V,0.2A,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PB709BRL

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-50V
Power Dissipation Pd
250mW
Dc Collector Current
-200mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
No.
RoHS Compliant
Dc Current Gain Hfe
210
Rohs Compliant
Yes
NXP Semiconductors
600
(1)
h
FE
400
(2)
200
(3)
0
−1
−10
−1
−10
= −10 V
V
CE
= 150 °C
(1) T
amb
= 25 °C
(2) T
amb
= −55 °C
(3) T
amb
Fig 6.
2PB709BSL: DC current gain as a function of
collector current; typical values
I
/I
= 10
C
B
= 150 °C
(1) T
amb
= 25 °C
(2) T
amb
= −55 °C
(3) T
amb
Fig 8.
2PB709BSL: Collector-emitter saturation voltage as a function of collector current; typical values
2PB709BRL_2PB709BSL
Product data sheet
2PB709BRL; 2PB709BSL
006aac460
−0.12
I
(A)
−0.08
−0.04
−10
2
−10
3
I
(mA)
C
Fig 7.
−1
V
CEsat
(V)
−1
−10
(1)
(2)
(3)
−2
−10
−1
−10
−1
−10
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
50 V, 200 mA PNP general-purpose transistors
(mA) = −0.75
I
B
C
−0.65
−0.55
−0.45
−0.35
−0.25
−0.15
−0.05
0.0
−2.0
−4.0
−6.0
0.0
= 25 °C
T
amb
2PB709BSL: Collector current as a function of
collector-emitter voltage; typical values
006aac462
−10
2
−10
3
I
(mA)
C
006aac461
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−8.0
−10.0
V
(V)
CE
© NXP B.V. 2010. All rights reserved.
6 of 13

Related parts for 2PB709BRL