BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 2

• Manufacturer Part Number: BUK6E4R0-75C
• Description: MOSFET,N CH,75V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E4R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-226
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK6E4R0-75C
Product data sheet
Pin
1
2
3
mb
Type number
BUK6E4R0-75C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
I2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
Simplified outline
SOT226 (I2PAK)
…continued
Conditions
I
R
T
I
V
see
D
D
j(init)
GS
GS
= 120 A; V
= 25 A; V
1
mb
Figure 14
= 10 V; see
= 50 Ω; V
2
= 25 °C; unclamped
3
DS
sup
GS
= 60 V;
≤ 75 V;
Figure
= 10 V;
Graphic symbol
13;
BUK6E4R0-75C
N-channel TrenchMOS FET
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
63
Version
SOT226
Max Unit
523
-
2 of 14
mJ
nC