BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 8

• Manufacturer Part Number: BUK6E4R0-75C
• Description: MOSFET,N CH,75V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E4R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-226
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E4R0-75C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
I
DSon
D
10
10
10
10
10
10
12
-1
-2
-3
-4
-5
-6
8
4
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
T
0
0
j
V
= 25 °C; t
GS
(V) =
1
3.4
p
40
= 300 μs
min
2
typ
3.6
max
80
3
10
All information provided in this document is subject to legal disclaimers.
I
D
003aad806
V
003aae381
GS
(A)
3.8
(V)
5.0
4.0
4.5
120
Rev. 02 — 30 August 2010
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
3
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK6E4R0-75C
max @1mA
min @2.5mA
typ @1mA
N-channel TrenchMOS FET
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad804
T
j
j
(°C)
(°C)
180
180
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