CY8C3244LTI-123 Cypress Semiconductor Corp, CY8C3244LTI-123 Datasheet - Page 94

• Manufacturer Part Number: CY8C3244LTI-123
• Description: CY8C3244LTI-123
• Manufacturer: Cypress Semiconductor Corp
• Series: PSOC™ 3 CY8C32xxr

Specifications of CY8C3244LTI-123

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, LIN, SPI, UART/USART
• Peripherals: CapSense, DMA, POR, PWM, WDT
• Number Of I /o: 25
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 5.5 V
• Data Converters: A/D 2x12b, D/A 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Technology: CMOS
• Processing Unit: Microcontroller
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Package Type: QFN EP
• Screening Level: Industrial
• Pin Count: 48
• Mounting: Surface Mount
• Rad Hardened: No
• Processor Series: CY8C32
• Core: 8051
• Data Bus Width: 32 bit
• Data Ram Size: 2 KB
• Interface Type: I2C, SPI, UART, USB
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 29
• Number Of Timers: 4
• Operating Supply Voltage: 1.71 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Controller Family/series: (8051) PSOC 3
• No. Of I/o's: 25
• Eeprom Memory Size: 0.5KB
• Ram Memory Size: 2KB
• Cpu Speed: 50MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.4 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.4.1 Flash
Table 11-44. Flash DC Specifications
Table 11-45. Flash AC Specifications
11.4.2 EEPROM
Table 11-46. EEPROM DC Specifications
Document Number: 001-56955 Rev. *J
T
T
T
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time, including
JTAG or SWD, and other overhead
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
Description
Description
Description
A
≤ 85 °C and T
Figure 11-50. Clock to Output Performance
J
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
A
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
PSoC
1.71
1.71
Min
Min
Min
20
10
–
–
–
–
–
–
®
3: CY8C32 Family
Typ
Typ
Typ
10
15
5
–
–
–
–
–
–
–
Data Sheet
Max
Max
Max
5.5
5.5
20
13
35
15
7
5
–
–
Page 94 of 119
seconds
Units
Units
years
Units
ms
ms
ms
ms
ms
V
V
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