CY8C3244LTI-123 Cypress Semiconductor Corp, CY8C3244LTI-123 Datasheet - Page 95

• Manufacturer Part Number: CY8C3244LTI-123
• Description: CY8C3244LTI-123
• Manufacturer: Cypress Semiconductor Corp
• Series: PSOC™ 3 CY8C32xxr

Specifications of CY8C3244LTI-123

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, LIN, SPI, UART/USART
• Peripherals: CapSense, DMA, POR, PWM, WDT
• Number Of I /o: 25
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 5.5 V
• Data Converters: A/D 2x12b, D/A 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Technology: CMOS
• Processing Unit: Microcontroller
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Package Type: QFN EP
• Screening Level: Industrial
• Pin Count: 48
• Mounting: Surface Mount
• Rad Hardened: No
• Processor Series: CY8C32
• Core: 8051
• Data Bus Width: 32 bit
• Data Ram Size: 2 KB
• Interface Type: I2C, SPI, UART, USB
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 29
• Number Of Timers: 4
• Operating Supply Voltage: 1.71 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Controller Family/series: (8051) PSOC 3
• No. Of I/o's: 25
• Eeprom Memory Size: 0.5KB
• Ram Memory Size: 2KB
• Cpu Speed: 50MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11-47. EEPROM AC Specifications
11.4.3 Nonvolatile Latches (NVL))
Table 11-48. NVL DC Specifications
Table 11-49. NVL AC Specifications
11.4.4 SRAM
Table 11-50. SRAM DC Specifications
Table 11-51. SRAM AC Specifications
Document Number: 001-56955 Rev. *J
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp.
T
cycles
V
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
A
DDD
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
≤ 25 °C,
≤ 55 °C,
PSoC
1.71
Min
Min
Min
100
Min
Min
1.2
DC
1K
20
20
10
20
20
–
®
3: CY8C32 Family
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
2
–
–
Data Sheet
50.01
Max
Max
Max
Max
Max
5.5
20
–
–
–
–
–
–
–
–
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program/
program/
cycles
cycles
Units
years
Units
Units
erase
erase
years
years
Units
Units
MHz
ms
V
V
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