STPS30L30CG-TR STMicroelectronics, STPS30L30CG-TR Datasheet - Page 4

• Manufacturer Part Number: STPS30L30CG-TR
• Description: DIODE SCHOTTKY 30V 15A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS30L30CG-TR

• Voltage - Forward (vf) (max) @ If: 460mV @ 15A
• Current - Reverse Leakage @ Vr: 1.5mA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6581-2; STPS30L30CG-TR

Characteristics
Figure 12. Reverse safe operating area (t
4/9
Figure 8.
Figure 10. Forward voltage drop versus
1E+3
1E+2
1E+1
1E+0
200
100
1E-1
1E-2
10
1
0.0
IFM(A)
0
IR(mA)
Tj=15 0 °C
(typical values)
0.2
Reverse leakage current versus
reverse voltage applied (typical
values per diode)
forward current (maximum values
per diode)
5
0.4
Tj=25 °C
10
0.6
Tj=12 5 °C
Tj=150°C
Tj=125°C
VFM(V)
Tj=25°C
VR(V)
0.8
15
55
50
45
40
35
30
25
20
1.0
30
20
Iarm (A)
1.2
Operating area
25
35
1.4
Doc ID 5506 Rev 6
1.6
p
30
40
< 1 µs and T
Figure 9.
Figure 11. Thermal resistance junction to
45
5.0
1.0
0.1
80
70
60
50
40
30
20
10
0
0
1
Rth(j-a) (°C/W)
C(nF)
j
Forbidden area
50
< 150 °C)
4
Varm (V)
2
Junction capacitance versus
reverse voltage applied
(typical values per diode)
ambient versus copper surface
under tab
8
55
12
16
60
S(Cu) (cm²)
5
Epoxy printed circuit board,
copper thickness = 35 µm
VR(V)
20
10
24
28
20
STPS30L30C
32
F=1MHz
Tj=25°C
D 2 PAK
36
50
40