STPS40H100CW STMicroelectronics, STPS40H100CW Datasheet - Page 2

• Manufacturer Part Number: STPS40H100CW
• Description: DIODE SCHOTTKY 100V 20A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS40H100CW

• Voltage - Forward (vf) (max) @ If: 730mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Configuration: Common Cathode
• Current, Forward: 40 A
• Current, Reverse: 1 A
• Current, Surge: 300 A
• Package Type: TO-247
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.55 °C/W
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +175 °C
• Voltage, Forward: 0.85 V
• Voltage, Reverse: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2725-5

STPS40H100CW
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
To evaluate the maximum conduction losses use the following equation :
P = 0.5 x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
2/4
16
14
12
10
When the diodes 1 and 2 are used simultaneously :
0.01
Symbol
8
6
4
2
0
Symbol
0.0
0.1
R
Tj(diode 1) = P(diode1) x R
R
0.01
1
PF(av)(W)
V
th (j-c)
I
th (c)
P
R
F
P
ARM
ARM p
*
**
2.5
(1µs)
(t )
F(AV)
5.0
= 0.05
0.1
Junction to case
* tp = 5 ms, < 2%
** tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
+ 0.0055 x I
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
= 0.1
Parameter
1
IF(av) (A)
= 0.2
t (µs)
p
F
2
(RMS)
10
th(j-c)
= 0.5
(Per diode) + P(diode 2) x R
100
=tp/T
Parameter
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
T
= 1
tp
Tests Conditions
1000
Fig. 2: Average forward current versus ambient
temperature ( =0.5, per diode).
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
22
20
18
16
14
12
10
8
6
4
2
0
1
0
V
I
I
I
I
0
F
F
F
F
0
P
IF(av)(A)
R
P
ARM
= 20 A
= 20 A
= 40 A
= 40 A
ARM p
= V
=tp/T
(25°C)
th(c)
25
(t )
RRM
25
T
Per diode
Total
Coupling
tp
50
50
Min.
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
75
Tamb(°C)
T (°C)
j
75
Typ.
0.58
0.67
100
5
Value
0.55
100
0.9
0.1
Max.
125
0.73
0.61
0.85
0.72
10
15
125
150
°C/W
Unit
Unit
mA
µA
V
175
150