STPS40H100CW STMicroelectronics, STPS40H100CW Datasheet - Page 3

• Manufacturer Part Number: STPS40H100CW
• Description: DIODE SCHOTTKY 100V 20A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS40H100CW

• Voltage - Forward (vf) (max) @ If: 730mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Configuration: Common Cathode
• Current, Forward: 40 A
• Current, Reverse: 1 A
• Current, Surge: 300 A
• Package Type: TO-247
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.55 °C/W
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +175 °C
• Voltage, Forward: 0.85 V
• Voltage, Reverse: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2725-5

Fig. 5: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
Fig. 7: Reverse leakage current versus reverse
voltage applied (maximum values, per diode).
400
350
300
250
200
150
100
1E+1
1E+0
Fig. 9:
current (per diode).
200
100
1E-1
1E-2
1E-3
1E-4
50
10
1E-3
0
1
0.0
IM(A)
IFM(A)
0
IR(mA)
I
M
0.2
10
Maximum values
Forward voltage drop versus forward
=0.5
t
Tj=125°C
0.4
20
Typical values
Tj=125°C
1E-2
30
0.6
40
0.8
VFM(V)
Tj=125°C
Tj=100°C
Tj=75°C
VR(V)
Tj=25°C
t(s)
50
Maximum values
1.0
Tj=25°C
60
1E-1
1.2
70
1.4
80
1.6
Tc=50°C
Tc=100°C
Tc=150°C
90 100
1E+0
1.8
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.0
0.8
0.6
0.4
0.2
0.0
3.0
1.0
0.1
1E-3
1
C(nF)
Zth(j-c)/Rth(j-c)
= 0.2
= 0.5
= 0.1
Single pulse
2
1E-2
5
VR(V)
tp(s)
10
STPS40H100CW
1E-1
20
=tp/T
50
F=1MHz
Tj=25°C
T
tp
1E+0
100
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