MRFE6VP5600HSR5 Freescale Semiconductor, MRFE6VP5600HSR5 Datasheet - Page 2

• Manufacturer Part Number: MRFE6VP5600HSR5
• Description: RF MOSFET Power VHV6 600W 50V NI1230HS
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP5600HSR5

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 130 V
• Power Dissipation: 1667 W
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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MRFE6VP5600HR6 MRFE6VP5600HSR6
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
1. Each side of device measured separately.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
D
DS
D
D
D
(1)
= 100 mA)
GS
GS
= 960 μAdc)
= 100 mAdc, Measured in Functional Test)
= 2 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(1)
(1)
(1)
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
Symbol
V
V
V
V
I
I
I
C
DS(on)
C
(BR)DSS
GS(th)
GS(Q)
C
G
= 100 mA, P
IRL
GSS
DSS
DSS
η
oss
rss
iss
ps
D
out
23.5
73.5
Min
130
1.7
2.0
—
—
—
—
—
—
—
—
= 600 W Peak (120 W Avg.), f = 230 MHz,
0.26
1.60
25.0
74.6
Typ
129
342
--18
2.2
2.5
—
—
—
—
IV (Minimum)
B (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
26.5
--12
2.7
3.0
10
20
—
—
—
—
—
—
1
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%