MRFE6VP5600HSR5 Freescale Semiconductor, MRFE6VP5600HSR5 Datasheet - Page 5

• Manufacturer Part Number: MRFE6VP5600HSR5
• Description: RF MOSFET Power VHV6 600W 50V NI1230HS
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP5600HSR5

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 130 V
• Power Dissipation: 1667 W
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
1000
90
80
70
60
50
40
30
20
100
27
26
25
24
23
22
21
20
10
40
Figure 3. Capacitance versus Drain- -Source Voltage
1
Figure 5. Pulsed Power Gain and Drain Efficiency
0
0
V
Pulse Width = 100 μsec, 20% Duty Cycle
Note: Each side of device measured separately.
DD
Figure 7. Pulsed Drain Efficiency versus
= 50 Vdc, I
100
P
P
10
V
V
out
out
DS
DD
Measured with ±30 mV(rms)ac @ 1 MHz
V
, OUTPUT POWER (WATTS) PULSED
200
, OUTPUT POWER (WATTS) PULSED
DQ
100
GS
, DRAIN--SOURCE VOLTAGE (VOLTS)
= 30 V
versus Output Power
= 100 mA, f = 230 MHz
= 0 Vdc
V
Pulse Width = 100 μsec, 20% Duty Cycle
DD
Output Power
= 50 Vdc, I
300
η
20
G
D
ps
35 V
400
DQ
= 100 mA, f = 230 MHz
30
40 V
500
TYPICAL CHARACTERISTICS
45 V
40
600
50 V
C
C
C
rss
iss
oss
1000
700
50
90
80
70
60
50
40
30
20
27
26
25
24
23
22
21
20
40
Figure 8. Pulsed Power Gain and Drain Efficiency
25_C
64
63
62
61
60
59
58
57
27
26
25
24
23
22
21
20
19
18
17
V
Pulse Width = 100 μsec, 20% Duty Cycle
DD
31
85_C
0
= 50 Vdc, I
V
Pulse Width = 100 μsec, 20% Duty Cycle
T
V
Pulse Width = 100 μsec, 20% Duty Cycle
DD
C
DD
= --30_C
= 50 Vdc, I
Figure 4. Pulsed Output Power versus
P1dB = 58.0 dBm
(632 W)
= 50 Vdc, I
100
P
P2dB = 58.2 dBm (664 W)
Figure 6. Pulsed Power Gain versus
out
32
V
DQ
, OUTPUT POWER (WATTS) PULSED
100
DD
P
versus Output Power
MRFE6VP5600HR6 MRFE6VP5600HSR6
out
= 100 mA, f = 230 MHz
= 30 V
P
DQ
in
, OUTPUT POWER (WATTS) PULSED
200
DQ
G
, INPUT POWER (dBm) PULSED
= 100 mA, f = 230 MHz
ps
33
= 100 mA, f = 230 MHz
P3dB = 58.3 dBm (679 W)
η
Output Power
Input Power
D
300
34
35 V
400
40 V
35
500
25_C
45 V
--30_C
36
85_C
600
Actual
1000
Ideal
50 V
90
80
70
60
50
40
30
20
700
37
5