MRFE6VP5600HSR5 Freescale Semiconductor, MRFE6VP5600HSR5 Datasheet - Page 6

RF MOSFET Power VHV6 600W 50V NI1230HS

MRFE6VP5600HSR5

Manufacturer Part Number
MRFE6VP5600HSR5
Description
RF MOSFET Power VHV6 600W 50V NI1230HS
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6VP5600HSR5

Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
130 V
Power Dissipation
1667 W
Package / Case
NI-1230S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
6
MRFE6VP5600HR6 MRFE6VP5600HSR6
10
10
10
10
10
10
Figure 9. MTTF versus Junction Temperature — CW
9
8
7
6
5
4
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
110
TYPICAL CHARACTERISTICS
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
150
out
170
= 600 W Avg., and η
190
210
D
= 75.2%.
230
250
Freescale Semiconductor
RF Device Data

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