MRFE6VP5600HSR5 Freescale Semiconductor, MRFE6VP5600HSR5 Datasheet - Page 7

• Manufacturer Part Number: MRFE6VP5600HSR5
• Description: RF MOSFET Power VHV6 600W 50V NI1230HS
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP5600HSR5

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 130 V
• Power Dissipation: 1667 W
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
Figure 10. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
MHz
230
f
V
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DD
= 50 Vdc, I
gate to gate, balanced configuration.
drain to drain, balanced configuration.
Z
source
Z
+
--
source
1.78 + j5.45
Z
Device
Under
Test
DQ
source
Z
Ω
= 100 mA, P
f = 230 MHz
load
f = 230 MHz
out
Z
= 600 W Peak
load
--
+
2.75 + j5.30
Z
load
Ω
Z
o
= 10 Ω
Output
Matching
Network
MRFE6VP5600HR6 MRFE6VP5600HSR6
7