BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet
BLF3G21-6
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BLF3G21-6 Summary of contents
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... BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table mA Mode of operation CW Two-tone Table 200 mA Mode of operation PHS CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... Ordering information Package Name Description - ceramic surface-mounted package; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor Simplified outline Graphic symbol 1 [ Min Max - 65 0 2.3 ...
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... Dq power gain drain efficiency adjacent channel power ratio (600 kHz) Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor Conditions L(AV) Conditions Min Typ Max Unit = 0. ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF3G21-6 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 2200 MHz at rated load power (dB mA Fig 1. Power gain as a function of CW load power; typical values (dB mA 2000.1 MHz. 2 Fig 3. ...
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... BW +ACPR at 600k 192 kHz BW 0 (MHz 1900 MHz Fig 6. 001aai230 1. (GHz Fig 8. Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor iss 10 C oss 5 C rss and C as function of drain supply iss rss oss voltage; typical values ...
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... Test information output 50 Fig 9. BLF3G21-6_1 Product data sheet V GG C17 Class-AB test circuit for 2 GHz Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor C20 C21 L2 C16 C18 L1 C12 C13 C11 L11 L10 C10 © NXP B.V. 2008. All rights reserved. ...
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... The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric ( = 2.2); thickness = 0.51 mm. r The other side is unetched and serves as a ground plane. See Table 9 for list of components. Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor C19 C18 C16 L2 C15 C14 C13 ...
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... mm 0.8 mm; length = 3 mm [3] 50 [3] 34.3 [3] 50 [3] 34.3 [3] 23.6 [3] 5.6 [3] 3.5 [3] 31.9 470 1 k Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor Remarks (L W) 3 1 11 8 1 14 3 12 2.2) ...
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... REFERENCES JEDEC JEITA Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor 2.03 0.10 0.58 0.25 0.97 0.25 1.27 0.00 0.43 ...
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... Radio Frequency Surface Mount Device Ultra High Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Data sheet status Product data sheet Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 25 June 2008 BLF3G21-6 UHF power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF3G21-6 All rights reserved. Date of release: 25 June 2008 Document identifier: BLF3G21-6_1 ...