BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 10

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF3G21-6_1
Product data sheet
Document ID
BLF3G21-6_1
Revision history
Table 10.
Acronym
CDMA
EDGE
GSM
HF
LDMOS
PHS
RF
SMD
UHF
VSWR
W-CDMA
Release date
20080625
Abbreviations
Description
Code Division Multiple Access
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Personal Handy-phone System
Radio Frequency
Surface Mount Device
Ultra High Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Rev. 01 — 25 June 2008
Change notice
-
UHF power LDMOS transistor
BLF3G21-6
Supersedes
-
© NXP B.V. 2008. All rights reserved.
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