BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 5

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
BLF3G21-6_1
Product data sheet
Fig 5.
Fig 7.
ACPR
(dB)
( )
Z
130
i
10
50
90
10
9
8
7
6
5
4
1.8
V
P
ACPR performance under PHS conditions,
measured in application board.
V
Input impedance as a function of frequency
(series components); typical values
1
192 kHz BW
DS
L(AV)
DS
192 kHz BW
ACPR
ACPR
= 26 V; I
= 26 V; I
= 2 W.
192 kHz BW
900k
ACPR
600k
1.85
0.5
at
at
Dq
Dq
300k
= 200 mA; T
= 90 mA; P
at
1.9
0
192 kHz
channel BW
L
+ACPR
R
X
192 kHz BW
h
= 45 W; T
i
i
25 C; f
1.95
+ACPR
+ACPR
0.5
192 kHz BW
192 kHz BW
300k
f (MHz)
f (GHz)
001aai228
001aai230
at
h
c
900k
600k
= 1900 MHz;
25 C.
at
at
1
2
Rev. 01 — 25 June 2008
Fig 6.
Fig 8.
(pF)
( )
Z
C
L
25
20
15
10
11
5
0
9
7
5
3
1.8
0
C
voltage; typical values.
V
Load impedance as a function of frequency
(series components); typical values
DS
iss
, C
= 26 V; I
rss
1.85
10
and C
Dq
= 90 mA; P
UHF power LDMOS transistor
oss
1.9
20
as function of drain supply
L
X
R
BLF3G21-6
= 45 W; T
C
L
L
C
C
oss
iss
rss
1.95
30
© NXP B.V. 2008. All rights reserved.
V
f (GHz)
001aai229
001aai231
DS
h
(V)
25 C.
40
2
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