BAV70W,115 NXP Semiconductors, BAV70W,115 Datasheet - Page 13

• Manufacturer Part Number: BAV70W,115
• Description: DIODE DUAL 100V 175MA H-S SC-70
• Manufacturer: NXP Semiconductors

Specifications of BAV70W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io) (per Diode): 175mA
• Diode Configuration: 1 Pair Common Cathode
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.175 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934024390115::BAV70W T/R::BAV70W T/R

NXP Semiconductors
12. Revision history
Table 10.
BAV70_SER_7
Product data sheet
Document ID
BAV70_SER_7
Modifications:
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
Revision history
Release date
20071127
20020403
19971021
20040204
20020405
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAV70M added
Section 1.1 “General
Table 1 “Product
Table 2 “Quick reference
Table 6 “Limiting
value from 85 V to 100 V
Table 6 “Limiting
from 75 V to 100 V
Table 8
I
Table 8
from 2.5 A to 0.5 A for T
Table 8
for T
Table 8
I
Table 8
I
Section 8 “Test
Section 10 “Packing
Section 11
Section 13 “Legal
R
R
R
condition V
maximum value from 60 A to 30 A for I
condition V
j
= 25 C
“Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
“Characteristics”: for BAV70, BAV70S and BAV70W change of I
“Characteristics”: for BAV70T change of I
“Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
“Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
“Soldering”: added
R
R
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
from 75 V to 80 V for T
from 75 V to 80 V for T
information”: added
Rev. 07 — 27 November 2007
overview”: added
values”: for BAV70, BAV70S and BAV70W change of V
values”: for BAV70, BAV70S and BAV70W change of V
information”: updated
information”: added
description”: amended
data”: added
j
= 25 C
j
j
= 25 C
= 150 C
R
Change notice
-
-
-
-
-
condition V
R
maximum value from 2.0 A to 0.5 A
R
High-speed switching diodes
= 25 V; T
BAV70 series
Supersedes
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
BAV70_5
BAV70S_1
BAV70T_2
BAV70W_5
j
= 150 C
© NXP B.V. 2007. All rights reserved.
R
RRM
R
maximum value
maximum value
maximum
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