BAV70W,115 NXP Semiconductors, BAV70W,115 Datasheet - Page 7

• Manufacturer Part Number: BAV70W,115
• Description: DIODE DUAL 100V 175MA H-S SC-70
• Manufacturer: NXP Semiconductors

Specifications of BAV70W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io) (per Diode): 175mA
• Diode Configuration: 1 Pair Common Cathode
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.175 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934024390115::BAV70W T/R::BAV70W T/R

NXP Semiconductors
8. Test information
BAV70_SER_7
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
Fig 6. Forward recovery voltage test circuit and waveforms
(1) I
R
V = V
S
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
S
R
= 50
R
= 50
= 1 mA
I
I
F
R
S
1 k
D.U.T.
450
I
F
r
= 0.35 ns
D.U.T.
OSCILLOSCOPE
R
i
= 50
r
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
mga881
SAMPLING
R
i
Rev. 07 — 27 November 2007
= 50
I
V
R
10 %
t
r
t
10 %
r
90 %
input signal
90 %
input signal
t
p
t
p
p
p
= 100 ns; duty cycle
100 ns; duty cycle
t
High-speed switching diodes
t
BAV70 series
V
I
F
V FR
= 0.05
output signal
0.005
output signal
© NXP B.V. 2007. All rights reserved.
t rr
mga882
(1)
t
t
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