BAS116T,115

Manufacturer Part NumberBAS116T,115
DescriptionDIODE SW SGL LOW LEAK SOT416
ManufacturerNXP Semiconductors
BAS116T,115 datasheets
 


Specifications of BAS116T,115

Voltage - Forward (vf) (max) @ If1.25V @ 150mAVoltage - Dc Reverse (vr) (max)75V
Current - Average Rectified (io)215mA (DC)Current - Reverse Leakage @ Vr5nA @ 75V
Diode TypeStandardSpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)3µsCapacitance @ Vr, F2pF @ 0V, 1MHz
Mounting TypeSurface MountPackage / CaseEMT3 (SOT-416, SC-75-3)
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934063959115
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DATA SHEET
dbook, halfpage
BAS116
Low-leakage diode
Product data sheet
Supersedes data of 1999 May 26
DISCRETE SEMICONDUCTORS
M3D088
2003 Dec 12

BAS116T,115 Summary of contents

  • Page 1

    DATA SHEET dbook, halfpage BAS116 Low-leakage diode Product data sheet Supersedes data of 1999 May 26 DISCRETE SEMICONDUCTORS M3D088 2003 Dec 12 ...

  • Page 2

    ... NXP Semiconductors Low-leakage diode FEATURES • Plastic SMD package • Low leakage current: typ • Switching time: typ. 0.8 µs • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATION • Low leakage current applications in surface mounted circuits ...

  • Page 3

    ... NXP Semiconductors Low-leakage diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th(j-tp) R thermal resistance from junction to ambient th(j-a) Note 1 ...

  • Page 4

    ... NXP Semiconductors Low-leakage diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − °C prior to surge. Based on square wave currents Fig ...

  • Page 5

    ... NXP Semiconductors Low-leakage diode (nA) 10 (1) 1 −1 10 (2) −2 10 − 100 (1) Maximum values. (2) Typical values Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth D.U. Ω ( mA. R Fig.7 Reverse recovery time test circuit and waveforms. 2003 Dec 12 mlb754 2 handbook, halfpage ...

  • Page 6

    ... NXP Semiconductors Low-leakage diode PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

  • Page 7

    ... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

  • Page 8

    ... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...