BAS116T,115 NXP Semiconductors, BAS116T,115 Datasheet - Page 4

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BAS116T,115

Manufacturer Part Number
BAS116T,115
Description
DIODE SW SGL LOW LEAK SOT416
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BAS116T,115

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
5nA @ 75V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
EMT3 (SOT-416, SC-75-3)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063959115
NXP Semiconductors
GRAPHICAL DATA
2003 Dec 12
handbook, full pagewidth
Low-leakage diode
handbook, halfpage
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents; T
I FSM
(A)
10
(mA)
10
I F
10
−1
300
200
100
1
2
1
0
Maximum permissible continuous forward
current as a function of ambient temperature.
0
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
j
100
= 25 °C prior to surge.
10
T
amb
( C)
o
MLB755
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
j
j
j
I F
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
300
200
100
0
Forward current as a function of forward
voltage.
0
0.4
10
3
0.8
(1)
t p (µs)
Product data sheet
(2)
1.2
BAS116
MBG704
V
MLB752 - 1
F
(3)
10
(V)
4
1.6

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