STGW19NC60WD STMicroelectronics, STGW19NC60WD Datasheet - Page 3

• Manufacturer Part Number: STGW19NC60WD
• Description: IGBT N-CH 23A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW19NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 42A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 42A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 125W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 42A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7483-5; STGW19NC60WD

STGP19NC60WD - STGW19NC60WD
1
Electrical ratings
Table 1.
1. Calculated according to the iterative formula:
2. Vclamp=480V, Tj=150°C, R
Table 2.
Symbol
Rthj-case
Rthj-amb
Symbol
I
V
P
CL
I
I
V
T
C
C
CES
I
TOT
T
GE
stg
F
(1)
(1)
j
(2)
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Collector current (pulsed)
Diode RMS forward current at T
Gate-emitter voltage
Total dissipation at T
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case max
Thermal resistance junction-case max diode
Thermal resistance junction-ambient max
G
=10Ω, V
Parameter
C
Parameter
I
C
= 25°C
(
T
GE
C
)
=15V
=
GS
----------------------------------------------------------------------------------------------------- -
R
THJ C
= 0)
C
–
= 25°C
C
C
×
= 25°C
= 100°C
T
V
JMAX
CESAT MAX
–
T
(
C
)
(
T
C
,
I
C
)
TO-220
TO-220
2.25
40
22
1
– 55 to 150
Value
Value
600
±20
125
62.5
35
12
Electrical ratings
TO-247
TO-247
0.95
2.5
42
23
°C/W
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
3/15