STGW19NC60WD STMicroelectronics, STGW19NC60WD Datasheet - Page 6

• Manufacturer Part Number: STGW19NC60WD
• Description: IGBT N-CH 23A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW19NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 42A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 42A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 125W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 42A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7483-5; STGW19NC60WD

Electrical characteristics
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Table 7.
Symbol
I
I
Q
Q
rrm
rrm
V
t
t
rr
rr
rr
rr
f
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
I
I
I
Tj = 25°C, di/dt = 100 A/µs
Figure 18
I
Tj =125°C, di/dt = 100A/µs
Figure 18
f
f
f
f
= 12A
= 12A, Tj = 125°C
= 12A,V
= 12A,V
Test conditions
R
R
= 50V,
= 50V,
STGP19NC60WD - STGW19NC60WD
Min.
Typ.
102
1.9
1.5
31
30
59
2
4
Max.
2.5
Unit
nC
nC
ns
ns
V
V
A
A