STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 13

• Manufacturer Part Number: STGW39NC60VD
• Description: IGBT N-CHAN 600V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW39NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V/1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5741

STGW39NC60VD
Dim.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
e
L
c
19.85
15.45
14.20
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
TO-247 mechanical data
18.50
mm.
5.45
5.50
Typ
Package mechanical data
20.15
15.75
14.80
Max .
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
13/15