STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 14

• Manufacturer Part Number: STGW39NC60VD
• Description: IGBT N-CHAN 600V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW39NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V/1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5741

Revision history
5
14/15
Revision history
Table 9.
05-May-2006
16-May-2007
17-Nov-2005
01-Dec-2006
22-Aug-2007
31-Jan-2008
10-Jul-2006
29-Jul-2008
Date
Document revision history
Revision
1
2
3
4
5
6
7
8
First release
Inserted curves
Modified value on
Modified value on
New curves
Added new
applications
Modified:
Updated V
Table 8: Collector-emitter diode
CE(sat)
Figure 17
updated:Figure 5
on
Absolute maximum ratings
Dynamic
Table 4
and new section
Changes
and
Figure 6
2.2: Frequency
STGW39NC60VD