IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 11

• Manufacturer Part Number: IGP10N60T
• Description: IGBT 600V 20A 110W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGP10N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
11
TrenchStop
®
Series
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
di /dt
1
r
F
I
1
r r m
IGP10N60T
r
2
2
r
t
2
S
Q
Q =Q
t =t
r r
S
r r
Rev. 2.3 Sep. 07
t
r r
S
Q
S
+
90% I
F
+
t
F
Q
t
F
=60nH
=40pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
r r m
q
V
T
t
R
C