IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 5

• Manufacturer Part Number: IGP10N60T
• Description: IGBT 600V 20A 110W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGP10N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
2 5 A
2 0 A
1 5 A
1 0 A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
30A
25A
20A
15A
10A
5 A
0 A
5A
0A
0 V
0V
V
V
GE
CE
=20V
10V
12V
15V
V
,
( T
(V
8V
6V
2 V
COLLECTOR
GE
j
1V
T
CE
= 25°C)
,
J
=20V)
= 1 75 °C
GATE-EMITTER VOLTAGE
2 5°C
4V
2V
-
EMITTER VOLTAGE
6V
3V
8V
4V
10 V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
30A
25A
20A
15A
10A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
5A
0A
-50°C
0V
®
V
GE
V
Series
CE
=20V
10V
15V
12V
( T
saturation voltage as a function of
junction temperature
( V
T
,
8V
6V
COLLECTOR
1V
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
0°C
= 15V)
2V
-
50°C
EMITTER VOLTAGE
IGP10N60T
3V
Rev. 2.3 Sep. 07
100°C
4V
I
I
C
150°C
C
=20A
I
=10A
C
5V
=5A
q