IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 7

• Manufacturer Part Number: IGP10N60T
• Description: IGBT 600V 20A 110W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGP10N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
1 ,0m J
0 ,8m J
0 ,6m J
0 ,4m J
0 ,2m J
0 ,0m J
0,6mJ
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
0 A
E
E
E
ts
off
on
*) E
*
*) E
*
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
d u e to d io de re c ov e ry
due to diode recovery
50°C
J
I
CE
on
GE
,
on
C
,
JUNCTION TEMPERATURE
and E
= 400V, V
an d E
= 0/15V, I
COLLECTOR CURRENT
5 A
ts
ts
include losses
in c lu d e lo s s es
C
GE
100°C
1 0A
= 10A, R
= 0/15V, R
J
CE
= 175°C,
= 400V,
G
= 23Ω,
1 5 A
G
150°C
= 23Ω,
E
E
E
off
on
7
TrenchStop
ts
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
0,8 mJ
0,6 mJ
0,4 mJ
0,2 mJ
0,0 mJ
0,8m J
0,6m J
0,4m J
0,2m J
0,0m J
300V
®
V
E
E
Series
E
CE
ts
off
on
*) E
*) E
*
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*
,
due to diode recovery
due to diode recovery
CE
350V
COLLECTOR
GE
on
on
= 400V, V
= 0/15V, I
R
and E
and E
G
,
GATE RESISTOR
400V
ts
ts
include losses
include losses
-
EMITTER VOLTAGE
C
GE
IGP10N60T
= 10A, R
450V
= 0/15V, I
J
J
= 175°C,
= 175°C,
Rev. 2.3 Sep. 07
500V
G
= 23Ω,
C
= 10A,
550V
E
E
E
on
ts
off
*
*
q