IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 6

• Manufacturer Part Number: IGP10N60T
• Description: IGBT 600V 20A 110W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGP10N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100ns
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
10ns
10ns
1ns
1ns
25°C
0A
t
t
d(on)
r
t
d(on)
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
I
CE
GE
,
C
t
,
JUNCTION TEMPERATURE
r
5A
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
75°C
1 0A
C
GE
100°C 125°C 15 0°C
= 10A, R
= 0/15V, R
J
CE
=175°C,
= 400V,
15A
G
=23Ω,
G
= 23Ω,
t
d(off)
t
f
20A
t
d(off)
t
f
6
TrenchStop
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
7V
6V
5V
4V
3V
2V
1V
0V
10ns
-50°C
1ns
®
m in.
Series
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
( I
T
C
CE
t
J
d(on)
t
,
r
0°C
= 0.3mA)
= 400V, V
JUNCTION TEMPERATURE
R
typ.
G
,
GATE RESISTOR
50°C
GE
IGP10N60T
= 0/15V, I
J
= 175°C,
100°C
Rev. 2.3 Sep. 07
m ax.
C
= 10A,
t
150°C
d(off)
t
f
q