SGP10N60A Infineon Technologies, SGP10N60A Datasheet
SGP10N60A
Specifications of SGP10N60A
Related parts for SGP10N60A
SGP10N60A Summary of contents
Page 1
... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.3V G10N60A 150 C 2.3V G10N60A 150 C Symbol jmax SGP10N60A SGW10N60A G PG-TO-247-3-21 PG-TO-220-3-1 Package PG-TO-220-3-1 PG-TO-247-3-21 Value 600 10 -55...+150 260 s Rev. 2 Unit V A ...
Page 2
... Short circuit collector current 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions PG-TO-220-3 PG-TO-247-3-21 Symbol Conditions SGP10N60A SGW10N60A Max. Value Unit 1.35 K Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.3 2 1500 - - 100 550 660 100 - A Rev. 2.3 Sep 07 ...
Page 3
... E reverse recovery =150 C j Symbol Conditions Energy losses include “tail” and diode E reverse recovery SGP10N60A SGW10N60A Value Unit min. typ. max 178 214 - 0.15 0.173 mJ - 0.17 0.221 - 0.320 0.394 Value Unit min. typ. max 198 238 - ...
Page 4
... Figure 3. Power dissipation as a function of case temperature (T 150 C) j 10A 1A 0, COLLECTOR CE Figure 2. Safe operating area ( ° ° 5° CASE TEMPERATURE C Figure 4. Collector current as a function of case temperature (V 15V SGP10N60A SGW10N60A 10V 100V 1000V - EMITTER VOLTAGE = 150 ° ° °C 150 C) Rev. 2.3 Sep 07 ...
Page 5
... Figure 6. Typical output characteristics (T = 150 C) j 3,5V 3,0V 2,5V 2,0V 1,5V 0°C 8V 10V T , JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP10N60A SGW10N60A EMITTER VOLTAGE I =20A C I =10A C I =5A C 50°C 100°C 150°C Rev. 2.3 ...
Page 6
... Figure 10. Typical switching times as a function of gate resistor (inductive load 0/+15V Dynamic test circuit in Figure 150° ° Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.3mA SGP10N60A SGW10N60A GATE RESISTOR G = 150 400V 10A ° ° ° ° JUNCTION TEMPERATURE j Rev. 2.3 ...
Page 7
... Dynamic test circuit in Figure K/W D=0.5 0.2 0 K/W 0.05 0.02 0. K/W single pulse -3 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGP10N60A SGW10N60A and E include losses off GATE RESISTOR G = 150 400V 10A 0.4287 0.0358 -3 0 ...
Page 8
... COLLECTOR CE Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V 150 SGP10N60A SGW10N60A C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE GATE EMITTER VOLTAGE Rev. 2.3 Sep 07 ...
Page 9
... PG-TO220-3-1 9 SGP10N60A SGW10N60A Rev. 2.3 Sep 07 ...
Page 10
... PG-TO247-3-21 10 SGP10N60A SGW10N60A Rev. 2.3 Sep 07 ...
Page 11
... Figure A. Definition of switching times Figure B. Definition of switching losses SGP10N60A SGW10N60A ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =55pF. Rev. 2.3 Sep 07 ...
Page 12
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP10N60A SGW10N60A 12 Rev. 2.3 ...