SGP10N60A Infineon Technologies, SGP10N60A Datasheet - Page 7

• Manufacturer Part Number: SGP10N60A
• Description: IGBT NPT 600V 20A 92W TO220-3
• Manufacturer: Infineon Technologies

Specifications of SGP10N60A

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.6 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGP10N60AXK

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
1,6m J
1,4m J
1,2m J
1,0m J
0,8m J
0,6m J
0,4m J
0,2m J
0,0m J
0,8mJ
0,6mJ
0,4mJ
0,2mJ
0,0mJ
GE
= 10A, R
= 0/+15V, R
0A
0°C
E
*) E
due to diode recovery.
E
E
*) E
due to diode recovery.
T
ts
off
on
j
I
G
,
*
C
on
on
*
JUNCTION TEMPERATURE
,
= 2 5 ,
5A
and E
and E
COLLECTOR CURRENT
G
50°C
j
CE
= 150 C, V
= 25 ,
ts
ts
include losses
= 400V, V
include losses
10A
100°C
15A
CE
GE
= 400V,
= 0/+15V,
20A
150°C
E
E
E
ts
on
off
*
*
25A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
1,0m J
0,8m J
0,6m J
0,4m J
0,2m J
10
10
10
GE
10
-1
-2
-3
0
= 0/+15V, I
K/W
K/W
K/W
K/W
p
0
1µs
/ T)
D=0.5
0.02
0.01
*) E
due to diode recovery.
single pulse
0.2
0.1
0.05
on
10µs
R
and E
20
G
C
t
p
,
,
= 10A,
j
GATE RESISTOR
= 150 C, V
PULSE WIDTH
100µs
ts
SGW10N60A
include losses
SGP10N60A
40
R
0.4287
0.4830
0.4383
R , ( K / W )
1
1m s
C
1
=
CE
1
/ R
Rev. 2.3
10m s 100m s
= 400V,
60
1
C
0.0358
4.3*10
3.46*10
2
=
, ( s )
2
/R
80
-3
E
E
R
2
E
-4
Sep 07
2
on
off
ts
*
*
1s