SGP10N60A Infineon Technologies, SGP10N60A Datasheet - Page 6

• Manufacturer Part Number: SGP10N60A
• Description: IGBT NPT 600V 20A 92W TO220-3
• Manufacturer: Infineon Technologies

Specifications of SGP10N60A

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.6 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGP10N60AXK

Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
100ns
100ns
GE
10ns
10ns
= 10A, R
= 0/+15V, R
0A
0°C
T
t
j
I
t
t
G
t
,
f
C
r
d(o n)
d (o ff)
JUNCTION TEMPERATURE
,
5A
= 2 5 ,
COLLECTOR CURRENT
G
j
50°C
CE
= 150 C, V
= 25 ,
= 400V, V
10A
15A
100°C
CE
GE
= 400V,
= 0/+15V,
20A
t
t
t
t
150°C
d(on)
r
d(off)
f
25A
6
5 ,5 V
5 ,0 V
4 ,5 V
4 ,0 V
3 ,5 V
3 ,0 V
2 ,5 V
2 ,0 V
1 ,5 V
1 ,0 V
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
1 00 n s
C
GE
10 n s
= 0.3mA)
= 0/+15V, I
0
-5 0 ° C
t
t
t
t
d(o ff)
f
d(o n )
r
T
j
,
JUNCTION TEMPERATURE
2 0
R
G
C
0 ° C
,
= 10A,
j
GATE RESISTOR
= 150 C, V
SGW10N60A
SGP10N60A
40
5 0 ° C
CE
Rev. 2.3
60
= 400V,
1 0 0 ° C
8 0
1 5 0 ° C
Sep 07
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