SGP10N60A Infineon Technologies, SGP10N60A Datasheet - Page 5

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SGP10N60A

Manufacturer Part Number
SGP10N60A
Description
IGBT NPT 600V 20A 92W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGP10N60A

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
92W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
20 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-220
Vce (max)
600.0 V
Ic(max) @ 25°
20.0 A
Ic(max) @ 100°
10.6 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGP10N60AXK
3 5 A
3 0 A
2 5 A
2 0 A
1 5 A
1 0 A
Figure 7. Typical transfer characteristics
(V
5 A
0 A
35A
30A
25A
20A
15A
10A
Figure 5. Typical output characteristics
(T
0 V
CE
5A
0A
0V
j
= 25 C)
= 10V)
V
CE
V
V
,
G E
1 V
GE
COLLECTOR
= 2 0 V
2V
,
1 5 V
1 3 V
1 1 V
9 V
7 V
5 V
GATE
2 V
-
EMITTER VOLTAGE
4V
-
EMITTER VOLTAGE
3 V
6V
T
j
=+25°C
+150°C
4 V
8V
5 V
10V
5
3 5 A
3 0 A
2 5 A
2 0 A
1 5 A
1 0 A
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
5 A
0 A
3,5V
3,0V
2,5V
2,0V
1,5V
Figure 6. Typical output characteristics
(T
GE
0 V
j
= 150 C)
= 15V)
0°C
V
CE
V
G E
,
T
1 V
COLLECTOR
j
= 2 0 V
,
JUNCTION TEMPERATURE
1 5 V
1 3 V
1 1 V
9 V
7 V
5 V
50°C
2 V
SGW10N60A
SGP10N60A
-
EMITTER VOLTAGE
100°C
3 V
Rev. 2.3
4 V
I
I
I
C
C
C
=10A
150°C
=20A
=5A
Sep 07
5 V

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