BUP314D Infineon Technologies, BUP314D Datasheet - Page 3

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Infineon
Semiconductor Group
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
d i
T
T
Reverse recovery charge
I
d i
T
T
F
F
F
F
j
j
j
j
CC
CC
CC
CC
Gon
Gon
Goff
Goff
F
F
= 25 A, V
= 25 A, V
= 25 A, V
= 25 A, V
= 25 °C
= 125 °C
= 25 °C
= 125 °C
/ d t = -800 A/µs
/ d t = -800 A/µs
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 47
= 47
= 47
= 47
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 0 V
= 0 V
= 25 A
= 25 A
= 25 A
= 25 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
-
Values
typ.
-
75
65
420
45
2.2
1.7
130
2.3
6
max.
-
-
110
100
560
60
2.8
180
4.3
11
BUP 314D
Jul-30-1996
Unit
ns
V
ns
µC