BUP314D Infineon Technologies, BUP314D Datasheet - Page 7

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

I
Infineon
Typ. gate charge
V
parameter: I
Short circuit safe operating area
I
Semiconductor Group
Csc
parameter: V
Csc
V
GE
GE
/ I
C(90°C)
= f ( V
= ( Q
20
16
14
12
10
10
V
8
6
4
2
0
6
4
2
0
0
0
CE
Gate
200
C puls
20
) , T
GE
)
= ± 15 V, t
40
j
400
= 150°C
= 25 A
60
600
80
800
sc
600 V
100
1000 1200
10 µs, L < 25 nH
120
140 nC 170
Q
800 V
V
V
Gate
CE
1600
7
Typ. capacitances
C = f ( V
Reverse biased safe operating area
I
I
parameter: V
Cpuls
parameter: V
Cpuls
C
/ I
C
10
10
10
10
nF
= f (V
2.5
1.5
1.0
0.5
0.0
-1
-2
1
0
CE
0
0
)
CE
200
5
GE
GE
) , T
= 15 V
400
= 0 V, f = 1 MHz
10
j
= 150°C
600
15
800
20
1000 1200
25
30
BUP 314D
Jul-30-1996
V
V
V
V
CE
Ciss
Coss
Crss
CE
1600
40