BUP314D Infineon Technologies, BUP314D Datasheet - Page 5

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Infineon
Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
C
parameter: t
C
parameter: t
I
I
C
C
= f ( V
= f ( V
50
40
35
30
25
20
15
10
50
40
35
30
25
20
15
10
A
A
5
0
5
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f ( V
50
40
35
30
25
20
15
10
A
5
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
BUP 314D
Jul-30-1996
V
V
CE
5