IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7555TRPBF
• Description: MOSFET P-CH DUAL 20V 4.3A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7555TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1066pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Channel Type: P
• Current, Drain: –4.3 A
• Package Type: MICRO-8
• Polarization: P-Channel
• Power Dissipation: 1.2 W
• Resistance, Drain To Source On: 0.055 Ohm
• Resistance, Thermal, Junction To Case: 100 °C/W
• Temperature, Operating, Minimum: -55 °C
• Voltage, Drain To Source: –20 V
• Voltage, Gate To Source: ±12 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 105 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.3 A
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7555TRPBF; IRF7555TRPBFTR

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1000
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.0001
Fig 9. Maximum Drain Current Vs.
1
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
125
0.01
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
100
80
60
40
20
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
50
Vs. Drain Current
J
J
IRF7555PbF
75
DM
x Z
1
thJA
P
2
10
DM
100
+ T
TOP
BOTTOM
A
t
1
t
2
125
-1.3A
-2.4A
-3.0A
°
I D
100
5
150