SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4916DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4916DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 7.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Power - Max: 1.9W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 7.8 A @ Channel 2
• Power Dissipation: 1900 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4916DY-T1-E3TR

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
MOSFET SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
a
Symbol
I
V
C
rm
Symbol
J
F
T
t
t
d(on)
d(off)
= 25 °C, unless otherwise noted
Q
t
t
t
t
t
rr
a
b
r
f
rr
J
= 25 °C, unless otherwise noted
I
I
D
D
I
I
I
I
I
F
I
F
I
F
I
F
≅ 1 A, V
≅ 1 A, V
V
F
F
F
F
V
I
= 2.2 A, dI/dt = 100 µA/µs
= 2.2 A, dI/dt = 100 µA/µs
= 2.2 A, dI/dt = 100 µA/µs
= 2.2 A, dI/dt = 100 µA/µs
F
R
V
V
= 1.3 A, dI/dt = 100 A/µs
= 1.3 A, dI/dt = 100 A/µs
= 1.3 A, dI/dt = 100 A/µs
= 1.3 A, dI/dt = 100 A/µs
R
DD
DD
= 1.0 A, T
= - 30 V, T
Test Conditions
= 30 V, T
= 15 V, R
= 15 V, R
V
V
I
Channel-1
GEN
Channel-2
GEN
F
R
R
Test Conditions
= 1.0 A
= 30 V
= 10 V
= 10 V, R
= 10 V, R
J
J
J
= 125 °C
= 100 °C
= 125 °C
L
L
= 15 Ω
= 15 Ω
g
g
= 6 Ω
= 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Min.
0.004
Typ.
0.47
0.36
0.7
3.0
50
Vishay Siliconix
Typ.
11
13
21
27
28
24
17
12
12
11
16
13
8
9
6
9
a
Si4916DY
0.100
Max.
0.50
0.42
10
20
Max.
www.vishay.com
15
15
18
20
32
40
10
15
40
35
Unit
mA
Unit
pF
V
nC
ns
ns
3