SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4916DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4916DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 7.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Power - Max: 1.9W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 7.8 A @ Channel 2
• Power Dissipation: 1900 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4916DY-T1-E3TR

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74331.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
4
Single Pulse
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10 -
Single Pulse
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
10 -
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
-
T
A
t
1
= P
1
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
(t)
1
2
= 85 °C/W
Si4916DY
www.vishay.com
600
10
9