PSMN5R6-100PS,127 NXP Semiconductors, PSMN5R6-100PS,127 Datasheet

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PSMN5R6-100PS,127

Manufacturer Part Number
PSMN5R6-100PS,127
Description
MOSFET N-CH 100V 100A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN5R6-100PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
141nC @ 10V
Input Capacitance (ciss) @ Vds
8061pF @ 50V
Power - Max
306W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0056 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
306000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4972-5
934064274127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche Ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
G(tot)
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Rev. 03 — 2 December 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Continuous current limited by package.
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
gate-drain charge V
total gate charge
non-repetitive
drain-source
avalanche energy
Conditions
T
T
see
T
V
see
see
V
I
R
D
j
mb
mb
GS
GS
GS
GS
≥ 25 °C; T
= 100 A; V
Figure 1
Figure
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; T
= 50 Ω; unclamped
11; see
13; see
j
D
D
sup
≤ 175 °C
j(init)
= 80 A; V
GS
= 25 A; T
≤ 100 V;
Figure 2
= 10 V;
= 25 °C;
Figure 12
Figure 14
Suitable for standard level gate drive
sources
Motor control
Server power supplies
DS
j
= 25 °C;
= 50 V;
[1]
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
4.3
43
141
-
Max Unit
100
100
306
5.6
-
-
468
V
A
W
mΩ
nC
nC
mJ

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PSMN5R6-100PS,127 Summary of contents

Page 1

... PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Rev. 03 — 2 December 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... Figure °C mb ≤ 10 µs; T pulsed ° ° j(init) ≤ 100 Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS Graphic symbol mbb076 Version SOT78 Min - = 20 kΩ -20 Figure 1 - [1] Figure 1 - Figure -55 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS 0 50 100 150 T 10 μ s 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN5R6-100PS Product data sheet N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Conditions see Figure 4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS Min Typ Max - 0.3 0.49 003aad684 δ ...

Page 5

... Figure 15; j see Figure 16 = 0.6 Ω 1.5 Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS Min Typ Max = 25 °C 100 - - = -55 ° 4 ° 175 ° 500 ° 100 = 25 ° ...

Page 6

... ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS Forward transconductance as a function of drain current; typical values −1 min typ max −2 −3 −4 −5 − Sub-threshold drain current as a function of gate-source voltage ...

Page 7

... R DSon (mΩ (V) GS Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS 003aad774 0 60 120 003aad689 V ( © NXP B.V. 2010. All rights reserved. ...

Page 8

... G Fig 14. Gate charge waveform definitions 003aad691 16000 C (pF) 12000 C iss 8000 C oss 4000 C rss (V) DS Fig 16. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS GS(pl) V GS(th GS1 GS2 G(tot function of gate-source voltage, typical values © ...

Page 9

... N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 200 I S (A) 160 120 80 = 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS 003aad693 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 11

... N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS Supersedes PSMN5R6-100PS v.2 PSMN5R6-100PS v.1 © NXP B.V. 2010. All rights reserved ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 December 2010 PSMN5R6-100PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 December 2010 Document identifier: PSMN5R6-100PS ...

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