PSMN5R6-100PS,127 NXP Semiconductors, PSMN5R6-100PS,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN5R6-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R6-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 141nC @ 10V
• Input Capacitance (ciss) @ Vds: 8061pF @ 50V
• Power - Max: 306W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 306000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4972-5; 934064274127

NXP Semiconductors
PSMN5R6-100PS
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
D
I
D
160
120
160
120
80
40
80
40
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
10
0.5
8
6
T
j
2
= 175 °C
5.5
1
5
4
V
GS
1.5
T
V
j
(V) = 4
All information provided in this document is subject to legal disclaimers.
= 25 °C
GS
V
003aad685
003aad687
DS
(V)
4.5
(V)
Rev. 03 — 2 December 2010
2
6
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Fig 6.
Fig 8.
(S)
(A)
g
I
10
10
10
10
10
10
D
250
200
150
100
fs
50
−1
−2
−3
−4
−5
−6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
20
PSMN5R6-100PS
2
40
min
60
typ
4
max
V
© NXP B.V. 2010. All rights reserved.
80
GS
003aad692
I
D
(V)
03aa35
(A)
100
6
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